IXFX48N60Q3 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
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Технічний опис IXFX48N60Q3 IXYS
Description: MOSFET N-CH 600V 48A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V.
Інші пропозиції IXFX48N60Q3
| Фото | Назва | Виробник | Інформація |
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IXFX48N60Q3 | Виробник : IXYS |
Description: MOSFET N-CH 600V 48A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
товару немає в наявності |
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IXFX48N60Q3 | Виробник : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A |
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IXFX48N60Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |