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Технічний опис IXFX52N100X IXYS
Description: MOSFET N-CH 1000V 52A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.
Інші пропозиції IXFX52N100X
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFX52N100X | IXYS |
 Description: MOSFET N-CH 1000V 52A PLUS247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFX52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: N Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Application: automotive industry Reverse recovery time: 260ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXFX52N100X |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 52A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Description: MOSFET N-CH 1000V 52A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFX52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.