Технічний опис IXFX55N50 Littelfuse
Description: MOSFET N-CH 500V 55A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.
Інші пропозиції IXFX55N50
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IXFX55N50 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Power dissipation: 520W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 300 шт |
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IXFX55N50 | Виробник : IXYS |
Description: MOSFET N-CH 500V 55A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
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IXFX55N50 | Виробник : IXYS |
MOSFET 500V 55A |
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IXFX55N50 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Power dissipation: 520W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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