Технічний опис IXFX64N50Q3 Littelfuse
Description: MOSFET N-CH 500V 64A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V.
Інші пропозиції IXFX64N50Q3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXFX64N50Q3 | Виробник : Littelfuse |
 Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
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IXFX64N50Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFX64N50Q3 | Виробник : IXYS |
Description: MOSFET N-CH 500V 64A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V |
товару немає в наявності |
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IXFX64N50Q3 | Виробник : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/64A |
товару немає в наявності |
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IXFX64N50Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |