Технічний опис IXFX78N50P3 IXYS
Description: MOSFET N-CH 500V 78A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 1130W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, FET Type: N-Channel.
Інші пропозиції IXFX78N50P3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXFX78N50P3 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 500V 78A PLUS247-3 Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 1130W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube FET Type: N-Channel |
товару немає в наявності |
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IXFX78N50P3 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 78A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 68mΩ Mounting: THT Gate charge: 147nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |