IXFX88N20Q IXYS

Description: MOSFET N-CH 200V 88A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Box.