IXFY30N25X3 IXYS

Description: MOSFET N-CH 250V 30A TO252AA, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 500µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.