IXFZ140N25T IXYS
Виробник: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
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Технічний опис IXFZ140N25T IXYS
Description: MOSFET N-CH 250V 100A DE475, Packaging: Tube, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V, Power Dissipation (Max): 445W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: DE475, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.
Інші пропозиції IXFZ140N25T
| Фото | Назва | Виробник | Інформація |
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IXFZ140N25T | Виробник : IXYS |
Description: MOSFET N-CH 250V 100A DE475 Packaging: Tube Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V Power Dissipation (Max): 445W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: DE475 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
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IXFZ140N25T | Виробник : IXYS |
MOSFET DiscMSFT NChTrenchGate-Gen1 DE475 |
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| IXFZ140N25T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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