на замовлення 300 шт:
термін постачання 336-345 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3198.87 грн |
| 10+ | 2941.27 грн |
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Технічний опис IXFZ520N075T2 IXYS
Description: MOSFET N-CH 75V 465A DE475, Packaging: Tube, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 465A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: DE475, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.
Інші пропозиції IXFZ520N075T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFZ520N075T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 75V 465A 6-Pin Case DE-475 |
товар відсутній |
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| IXFZ520N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 420A Power dissipation: 600W Case: DE475 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 545nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFZ520N075T2 | Виробник : IXYS |
Description: MOSFET N-CH 75V 465A DE475 Packaging: Tube Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 465A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: DE475 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
товар відсутній |
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| IXFZ520N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 420A Power dissipation: 600W Case: DE475 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 545nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |