| Кількість | Ціна |
|---|---|
| 1+ | 372.49 грн |
| 10+ | 225.64 грн |
| 100+ | 189.88 грн |
| 500+ | 154.01 грн |
| 1000+ | 146.98 грн |
| 2500+ | 146.28 грн |
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Технічний опис IXGA12N120A3 IXYS
Description: IGBT 1200V 22A 100W TO263, IGBT Type: PT, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Power - Max: 100 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 22 A, Gate Charge: 20.4 nC.
Інші пропозиції IXGA12N120A3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXGA12N120A3 | IXYS |
 Description: IGBT 1200V 22A 100W TO263IGBT Type: PT Supplier Device Package: TO-263AA Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Power - Max: 100 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 22 A Gate Charge: 20.4 nC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXGA12N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector current: 12A Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Technology: GenX3™; PT Type of transistor: IGBT Kind of package: tube Gate charge: 20.4nC Turn-on time: 202ns Turn-off time: 1545ns Power dissipation: 100W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGA12N120A3 |
|
Виробник: IXYS
Description: IGBT 1200V 22A 100W TO263
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
Description: IGBT 1200V 22A 100W TO263
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
товару немає в наявності
В кошику
од. на суму грн.
| IXGA12N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.