Технічний опис IXGA20N120B3 Littelfuse
Description: IGBT 1200V 36A 180W TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/150ns, Switching Energy: 920µJ (on), 560µJ (off), Test Condition: 600V, 16A, 15Ohm, 15V, Gate Charge: 51 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 180 W.
Інші пропозиції IXGA20N120B3
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IXGA20N120B3 | Виробник : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 180W Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Type of transistor: IGBT Gate charge: 51nC кількість в упаковці: 1 шт |
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IXGA20N120B3 | Виробник : IXYS |
Description: IGBT 1200V 36A 180W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/150ns Switching Energy: 920µJ (on), 560µJ (off) Test Condition: 600V, 16A, 15Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 180 W |
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IXGA20N120B3 | Виробник : IXYS |
IGBT Modules GenX3 1200V IGBTs |
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IXGA20N120B3 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 180W Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Type of transistor: IGBT Gate charge: 51nC |
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