Технічний опис IXGA30N60C3C1 IXYS
Description: IGBT 600V 60A 220W TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 17ns/42ns, Switching Energy: 120µJ (on), 90µJ (off), Test Condition: 300V, 20A, 5Ohm, 15V, Gate Charge: 38 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 220 W.
Інші пропозиції IXGA30N60C3C1
| Фото | Назва | Виробник | Інформація |
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IXGA30N60C3C1 | Виробник : Littelfuse |
 Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) D2PAK |
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IXGA30N60C3C1 | Виробник : IXYS |
Description: IGBT 600V 60A 220W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
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IXGA30N60C3C1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 220W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 38nC Kind of package: tube Turn-on time: 37ns Turn-off time: 160ns |
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