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Інші пропозиції IXGF25N250
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXGF25N250 | IXYS |
 Description: IGBT 2500V 30A 114W I4-PAKPackaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 114 W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGF25N250 | IXYS |
IGBTs ISOPLUS 2500V 30A IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |
| IXGF25N250 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac Type of transistor: IGBT Collector-emitter voltage: 2.5kV Collector current: 30A Power dissipation: 114W Case: i4-pac Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGF25N250 |
|
Виробник: IXYS
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товару немає в наявності
В кошику
од. на суму грн.
| IXGF25N250 |
|
Виробник: IXYS
IGBTs ISOPLUS 2500V 30A IGBT
IGBTs ISOPLUS 2500V 30A IGBT
товару немає в наявності
В кошику
од. на суму грн.
| IXGF25N250 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.