Технічний опис IXGH12N120A3 Littelfuse
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3, Type of transistor: IGBT, Technology: GenX3™; PT, Collector-emitter voltage: 1.2kV, Collector current: 12A, Power dissipation: 100W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mounting: THT, Gate charge: 20.4nC, Kind of package: tube, Turn-on time: 202ns, Turn-off time: 1545ns, кількість в упаковці: 1 шт.
Інші пропозиції IXGH12N120A3
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IXGH12N120A3 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns кількість в упаковці: 1 шт |
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IXGH12N120A3 | Виробник : IXYS |
Description: IGBT 1200V 22A 100W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W |
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IXGH12N120A3 | Виробник : IXYS |
IGBT Modules GenX3 1200V IGBTs |
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IXGH12N120A3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns |
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