Технічний опис IXGH24N170A Littelfuse
Description: IGBT 1700V 24A 250W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 21ns/336ns, Switching Energy: 2.97mJ (on), 790µJ (off), Test Condition: 850V, 24A, 10Ohm, 15V, Gate Charge: 140 nC, Part Status: Active, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 250 W.
Інші пропозиції IXGH24N170A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGH24N170A | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH24N170A | Виробник : Littelfuse | Trans IGBT Chip N-CH 1700V 25A 250W 3-Pin(3+Tab) TO-247AD |
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IXGH24N170A | Виробник : IXYS |
Description: IGBT 1700V 24A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 21ns/336ns Switching Energy: 2.97mJ (on), 790µJ (off) Test Condition: 850V, 24A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W |
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IXGH24N170A | Виробник : IXYS | IGBT Transistors 24 Amps 1200 V 5 V Rds |
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IXGH24N170A | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage |
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