Технічний опис IXGH30N120C3H1 Littelfuse
Description: IGBT 1200V 48A 250W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/106ns, Switching Energy: 1.45mJ (on), 470µJ (off), Test Condition: 600V, 24A, 5Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 115 A, Power - Max: 250 W.
Інші пропозиції IXGH30N120C3H1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXGH30N120C3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 60ns Turn-off time: 415ns кількість в упаковці: 1 шт |
товар відсутній |
||
IXGH30N120C3H1 | Виробник : IXYS |
Description: IGBT 1200V 48A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/106ns Switching Energy: 1.45mJ (on), 470µJ (off) Test Condition: 600V, 24A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 250 W |
товар відсутній |
||
IXGH30N120C3H1 | Виробник : IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode |
товар відсутній |
||
IXGH30N120C3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 60ns Turn-off time: 415ns |
товар відсутній |