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IXGH30N120C3H1

IXGH30N120C3H1 Littelfuse


ittelfuse_discrete_igbts_pt_ixgh30n120c3h1_datasheet.pdf.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-247AD
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Технічний опис IXGH30N120C3H1 Littelfuse

Description: IGBT 1200V 48A 250W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/106ns, Switching Energy: 1.45mJ (on), 470µJ (off), Test Condition: 600V, 24A, 5Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 115 A, Power - Max: 250 W.

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IXGH30N120C3H1 IXGH30N120C3H1 Виробник : IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120C3H1 IXGH30N120C3H1 Виробник : IXYS littelfuse_discrete_igbts_pt_ixgh30n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товар відсутній
IXGH30N120C3H1 IXGH30N120C3H1 Виробник : IXYS media-3322719.pdf IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
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IXGH30N120C3H1 IXGH30N120C3H1 Виробник : IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
товар відсутній