Технічний опис IXGH30N120C3H1 Littelfuse
Description: IGBT PT 1200V 48A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/106ns, Switching Energy: 1.45mJ (on), 470µJ (off), Test Condition: 600V, 24A, 5Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 115 A, Power - Max: 250 W.
Інші пропозиції IXGH30N120C3H1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IXGH30N120C3H1 | Виробник : IXYS | IXGH30N120C3H1 THT IGBT transistors |
товару немає в наявності |
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IXGH30N120C3H1 | Виробник : IXYS |
Description: IGBT PT 1200V 48A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/106ns Switching Energy: 1.45mJ (on), 470µJ (off) Test Condition: 600V, 24A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 250 W |
товару немає в наявності |
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IXGH30N120C3H1 | Виробник : IXYS |
 IGBTs High Frequency Range 40khz C-IGBT w/Diode |
товару немає в наявності |