Технічний опис IXGH40N120B2D1 IXYS
Description: IGBT PT 1200V 75A TO-247AD, Power - Max: 380 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, Gate Charge: 138 nC, Test Condition: 960V, 40A, 2Ohm, 15V, Switching Energy: 4.5mJ (on), 3mJ (off), Td (on/off) @ 25°C: 21ns/290ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A, Reverse Recovery Time (trr): 100 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXGH40N120B2D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXGH40N120B2D1 | IXYS |
 Description: IGBT PT 1200V 75A TO-247ADPower - Max: 380 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active Gate Charge: 138 nC Test Condition: 960V, 40A, 2Ohm, 15V Switching Energy: 4.5mJ (on), 3mJ (off) Td (on/off) @ 25°C: 21ns/290ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A Reverse Recovery Time (trr): 100 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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В кошику од. на суму грн. |
 |
IXGH40N120B2D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 138nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 79ns Turn-off time: 770ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGH40N120B2D1 |
|
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Power - Max: 380 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 138 nC
Test Condition: 960V, 40A, 2Ohm, 15V
Switching Energy: 4.5mJ (on), 3mJ (off)
Td (on/off) @ 25°C: 21ns/290ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 1200V 75A TO-247AD
Power - Max: 380 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 138 nC
Test Condition: 960V, 40A, 2Ohm, 15V
Switching Energy: 4.5mJ (on), 3mJ (off)
Td (on/off) @ 25°C: 21ns/290ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXGH40N120B2D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
товару немає в наявності
В кошику
од. на суму грн.