Технічний опис IXGH4N250C IXYS
Description: IGBT 2500V 13A 150W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: -/350ns, Switching Energy: 360µJ (off), Test Condition: 1250V, 4A, 20Ohm, 15V, Gate Charge: 57 nC, Part Status: Active, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 46 A, Power - Max: 150 W.
Інші пропозиції IXGH4N250C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXGH4N250C | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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IXGH4N250C | Виробник : IXYS |
Description: IGBT 2500V 13A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: -/350ns Switching Energy: 360µJ (off) Test Condition: 1250V, 4A, 20Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 46 A Power - Max: 150 W |
товар відсутній |
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| IXGH4N250C | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT |
товар відсутній |