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Технічний опис IXGK320N60B3 IXYS
Description: IGBT PT 600V 500A TO-264, Power - Max: 1700 W, Current - Collector Pulsed (Icm): 1200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 500 A, Part Status: Active, Switching Energy: 2.7mJ (on), 3.5mJ (off), Td (on/off) @ 25°C: 44ns/250ns, IGBT Type: PT, Supplier Device Package: TO-264 (IXGK), Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Gate Charge: 585 nC, Test Condition: 480V, 100A, 1Ohm, 15V.
Інші пропозиції IXGK320N60B3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXGK320N60B3 | IXYS |
Description: IGBT PT 600V 500A TO-264Power - Max: 1700 W Current - Collector Pulsed (Icm): 1200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 500 A Part Status: Active Switching Energy: 2.7mJ (on), 3.5mJ (off) Td (on/off) @ 25°C: 44ns/250ns IGBT Type: PT Supplier Device Package: TO-264 (IXGK) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Gate Charge: 585 nC Test Condition: 480V, 100A, 1Ohm, 15V |
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В кошику од. на суму грн. |
|
IXGK320N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 1.7kW Case: TO264 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate charge: 585nC Turn-on time: 107ns Turn-off time: 595ns Collector current: 320A Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGK320N60B3 |
![]() |
Виробник: IXYS
Description: IGBT PT 600V 500A TO-264
Power - Max: 1700 W
Current - Collector Pulsed (Icm): 1200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 A
Part Status: Active
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 44ns/250ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Gate Charge: 585 nC
Test Condition: 480V, 100A, 1Ohm, 15V
Description: IGBT PT 600V 500A TO-264
Power - Max: 1700 W
Current - Collector Pulsed (Icm): 1200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 A
Part Status: Active
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 44ns/250ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Gate Charge: 585 nC
Test Condition: 480V, 100A, 1Ohm, 15V
товару немає в наявності
В кошику
од. на суму грн.
| IXGK320N60B3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
товару немає в наявності
В кошику
од. на суму грн.




