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IXGK35N120CD1

IXGK35N120CD1 IXYS


98961.pdf Виробник: IXYS
Description: IGBT 1200V 70A 350W PLUS247
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
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Технічний опис IXGK35N120CD1 IXYS

Description: IGBT 1200V 70A 350W PLUS247, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A, Supplier Device Package: TO-264 (IXGK), Td (on/off) @ 25°C: 50ns/150ns, Switching Energy: 3mJ (off), Test Condition: 960V, 35A, 5Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 350 W.

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IXGK35N120CD1 IXGK35N120CD1 Виробник : IXYS ixys_98961-1547276.pdf IGBT Transistors 70 Amps 1200V 4 V Rds
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