IXGK55N120A3H1 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
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Технічний опис IXGK55N120A3H1 IXYS
Description: IGBT 1200V 125A 460W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 23ns/365ns, Switching Energy: 5.1mJ (on), 13.3mJ (off), Test Condition: 960V, 55A, 3Ohm, 15V, Gate Charge: 185 nC, Current - Collector (Ic) (Max): 125 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 460 W.
Інші пропозиції IXGK55N120A3H1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGK55N120A3H1 | Виробник : IXYS |
Description: IGBT 1200V 125A 460W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 23ns/365ns Switching Energy: 5.1mJ (on), 13.3mJ (off) Test Condition: 960V, 55A, 3Ohm, 15V Gate Charge: 185 nC Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 400 A Power - Max: 460 W |
товар відсутній |
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IXGK55N120A3H1 | Виробник : IXYS | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode |
товар відсутній |
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IXGK55N120A3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
товар відсутній |