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IXGK82N120A3

IXGK82N120A3 IXYS


IXGK(x)82N120A3.pdf Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
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Технічний опис IXGK82N120A3 IXYS

Description: IGBT 1200V 260A 1250W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 34ns/265ns, Switching Energy: 5.5mJ (on), 12.5mJ (off), Test Condition: 600V, 80A, 2Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 260 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 580 A, Power - Max: 1250 W.

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IXGK82N120A3 IXGK82N120A3 Виробник : IXYS littelfuse_discrete_igbts_pt_ixg_82n120a3_datasheet.pdf.pdf Description: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
товар відсутній
IXGK82N120A3 IXGK82N120A3 Виробник : IXYS media-3321675.pdf IGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGK82N120A3 IXGK82N120A3 Виробник : IXYS IXGK(x)82N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній