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IXGN50N120C3H1

IXGN50N120C3H1 IXYS

littelfuse_discrete_igbts_pt_ixgn50n120c3h1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 95A 460W SOT227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Технічний опис IXGN50N120C3H1 IXYS

Description: IGBT MOD 1200V 95A 460W SOT227B, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 460 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 95 A, Part Status: Active, IGBT Type: PT, Supplier Device Package: SOT-227B, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.

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IXGN50N120C3H1 IXGN50N120C3H1 IXYS Littelfuse_Discrete_IGBTs_PT_IXGN50N120C3H1_Datasheet.PDF IGBT Modules High Frequency Range >40khz CIGBT w/Diode
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IXGN50N120C3H1 IXGN50N120C3H1 IXYS IXGN50N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
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IXGN50N120C3H1 Littelfuse_Discrete_IGBTs_PT_IXGN50N120C3H1_Datasheet.PDF
IXGN50N120C3H1
Виробник: IXYS
IGBT Modules High Frequency Range >40khz CIGBT w/Diode
товару немає в наявності
В кошику  од. на суму  грн.
IXGN50N120C3H1 IXGN50N120C3H1.pdf
IXGN50N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.