Технічний опис IXGP42N30C3 IXYS
Description: IGBT 300V 223W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 21ns/113ns, Switching Energy: 120µJ (on), 150µJ (off), Test Condition: 200V, 21A, 10Ohm, 15V, Gate Charge: 76 nC, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 223 W.
Інші пропозиції IXGP42N30C3
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IXGP42N30C3 | Виробник : IXYS |
 Description: IGBT 300V 223W TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 21ns/113ns Switching Energy: 120µJ (on), 150µJ (off) Test Condition: 200V, 21A, 10Ohm, 15V Gate Charge: 76 nC Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 250 A Power - Max: 223 W |
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IXGP42N30C3 | Виробник : IXYS |
IGBT Transistors 42 Amps 300V |
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