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IXGR32N90B2D1 IXYS

Name: IXGR32N90B2D1
Brand: IXYS
SKU: 459857145-1
Price: 1100.14 UAH
Availability: BackOrder

pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAA0C3ABDBB820&compId=IXGR32N90B2D1.pdf?ci_sign=4e3505393e88d60d0432f68251c3df3d2cf69303

Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
кількість в упаковці: 1 шт

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Технічний опис IXGR32N90B2D1 IXYS

Description: IGBT PT 900V 47A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/260ns, Switching Energy: 2.2mJ (off), Test Condition: 720V, 32A, 5Ohm, 15V, Gate Charge: 89 nC, Part Status: Active, Current - Collector (Ic) (Max): 47 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 160 W.

Інші пропозиції IXGR32N90B2D1

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	IXGR32N90B2D1	Виробник : IXYS	Description: IGBT PT 900V 47A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 20ns/260ns Switching Energy: 2.2mJ (off) Test Condition: 720V, 32A, 5Ohm, 15V Gate Charge: 89 nC Part Status: Active Current - Collector (Ic) (Max): 47 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 160 W	товару немає в наявності	В кошику од. на суму грн.
	IXGR32N90B2D1	Виробник : IXYS	Category: THT IGBT transistors Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Gate charge: 89nC Turn-on time: 42ns Turn-off time: 690ns Gate-emitter voltage: ±20V Collector current: 22A Power dissipation: 160W Pulsed collector current: 200A Collector-emitter voltage: 900V Case: PLUS247™ Technology: HiPerFAST™; PT Type of transistor: IGBT Kind of package: tube Mounting: THT	товару немає в наявності	В кошику од. на суму грн.