Технічний опис IXGR55N120A3H1 Littelfuse
Description: IGBT PT 1200V 70A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 23ns/365ns, Switching Energy: 5.1mJ (on), 13.3mJ (off), Test Condition: 960V, 55A, 3Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 330 A, Power - Max: 200 W.
Інші пропозиції IXGR55N120A3H1
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXGR55N120A3H1 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Mounting: THT Type of transistor: IGBT Power dissipation: 200W Kind of package: tube Gate charge: 185nC Technology: GenX3™; PT Case: PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 330A Turn-on time: 70ns Turn-off time: 1253ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXGR55N120A3H1 | Виробник : IXYS |
Description: IGBT PT 1200V 70A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 23ns/365ns Switching Energy: 5.1mJ (on), 13.3mJ (off) Test Condition: 960V, 55A, 3Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 330 A Power - Max: 200 W |
товару немає в наявності |
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IXGR55N120A3H1 | Виробник : IXYS |
IGBTs High Frequency Range 40khz C-IGBT w/Diode |
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IXGR55N120A3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Mounting: THT Type of transistor: IGBT Power dissipation: 200W Kind of package: tube Gate charge: 185nC Technology: GenX3™; PT Case: PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 330A Turn-on time: 70ns Turn-off time: 1253ns |
товару немає в наявності |