Технічний опис IXGR6N170A IXYS
Description: IGBT 1700V 5.5A ISOPLUS247, Power - Max: 50 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 5.5 A, Part Status: Active, Gate Charge: 18.5 nC, Test Condition: 850V, 6A, 33Ohm, 15V, Switching Energy: 590µJ (on), 180µJ (off), Td (on/off) @ 25°C: 46ns/220ns, Supplier Device Package: ISOPLUS247™, Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXGR6N170A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXGR6N170A | Littelfuse |
 Trans IGBT Chip N-CH 1700V 5.5A 50W 3-Pin(3+Tab) ISOPLUS 247 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXGR6N170A | IXYS |
Description: IGBT 1700V 5.5A ISOPLUS247 Power - Max: 50 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 5.5 A Part Status: Active Gate Charge: 18.5 nC Test Condition: 850V, 6A, 33Ohm, 15V Switching Energy: 590µJ (on), 180µJ (off) Td (on/off) @ 25°C: 46ns/220ns Supplier Device Package: ISOPLUS247™ Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXGR6N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXGR6N170A |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 1700V 5.5A 50W 3-Pin(3+Tab) ISOPLUS 247
Trans IGBT Chip N-CH 1700V 5.5A 50W 3-Pin(3+Tab) ISOPLUS 247
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXGR6N170A |
|
Виробник: IXYS
Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXGR6N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.