Технічний опис IXGR6N170A Littelfuse
Description: IGBT 1700V 5.5A 50W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A, Supplier Device Package: ISOPLUS247™, Td (on/off) @ 25°C: 46ns/220ns, Switching Energy: 590µJ (on), 180µJ (off), Test Condition: 850V, 6A, 33Ohm, 15V, Gate Charge: 18.5 nC, Part Status: Active, Current - Collector (Ic) (Max): 5.5 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 50 W.
Інші пропозиції IXGR6N170A
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IXGR6N170A | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage кількість в упаковці: 300 шт |
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IXGR6N170A | Виробник : IXYS |
Description: IGBT 1700V 5.5A 50W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Supplier Device Package: ISOPLUS247™ Td (on/off) @ 25°C: 46ns/220ns Switching Energy: 590µJ (on), 180µJ (off) Test Condition: 850V, 6A, 33Ohm, 15V Gate Charge: 18.5 nC Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 18 A Power - Max: 50 W |
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IXGR6N170A | Виробник : IXYS |
IGBT Modules High Voltage IGBTs |
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IXGR6N170A | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage |
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