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IXGT15N120BD1

IXGT15N120BD1 IXYS


98658.pdf Виробник: IXYS
Description: IGBT 1200V 30A 150W TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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Технічний опис IXGT15N120BD1 IXYS

Description: IGBT 1200V 30A 150W TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A, Supplier Device Package: TO-268AA, Td (on/off) @ 25°C: 25ns/150ns, Switching Energy: 1.75mJ (off), Test Condition: 960V, 15A, 10Ohm, 15V, Gate Charge: 69 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 150 W.

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IXGT15N120BD1 IXGT15N120BD1 Виробник : IXYS ixys_98658-1547518.pdf IGBT Transistors 30 Amps 1200V 3.2 Rds
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