Технічний опис IXGT16N170AH1 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268, Mounting: SMD, Pulsed collector current: 40A, Type of transistor: IGBT, Turn-on time: 35ns, Kind of package: tube, Case: TO268, Turn-off time: 298ns, Gate-emitter voltage: ±20V, Collector current: 11A, Collector-emitter voltage: 1.7kV, Power dissipation: 190W, Gate charge: 70nC, Technology: NPT, Features of semiconductor devices: high voltage, кількість в упаковці: 1 шт.
Інші пропозиції IXGT16N170AH1
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IXGT16N170AH1 | Виробник : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT16N170AH1 | Виробник : IXYS |
Description: IGBT 1700V 16A 190W TO268 |
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IXGT16N170AH1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage |
товар відсутній |