IXGT24N170A IXYS
Виробник: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
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Технічний опис IXGT24N170A IXYS
Description: IGBT 1700V 24A 250W TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 21ns/336ns, Switching Energy: 2.97mJ (on), 790µJ (off), Test Condition: 850V, 24A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 250 W.
Інші пропозиції IXGT24N170A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGT24N170A | Виробник : IXYS |
Description: IGBT 1700V 24A 250W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 21ns/336ns Switching Energy: 2.97mJ (on), 790µJ (off) Test Condition: 850V, 24A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W |
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IXGT24N170A | Виробник : IXYS |
IGBT Transistors 24 Amps 1200 V 5 V Rds |
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IXGT24N170A | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 54ns Case: TO268 Turn-off time: 456ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD |
товар відсутній |