IXGT25N160 IXYS
Виробник: IXYSDescription: IGBT NPT 1600V 75A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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Технічний опис IXGT25N160 IXYS
Description: IGBT NPT 1600V 75A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 300 W.
Інші пропозиції IXGT25N160
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXGT25N160 | Виробник : IXYS |
IGBT Transistors 75 Amps 1600V 2.5 Rds |
товару немає в наявності |
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IXGT25N160 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage |
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