Продукція > LITTELFUSE > IXGT30N120B3D1

IXGT30N120B3D1 Littelfuse

Name: IXGT30N120B3D1
Brand: IXYS
SKU: 453793164-1
Price: 478.27 UAH
Availability: BackOrder

ittelfuse_discrete_igbts_pt_ixg_30n120b3d1_datasheet.pdf.pdf

Виробник: Littelfuse
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268

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Технічний опис IXGT30N120B3D1 Littelfuse

Description: IGBT PT 1200V TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A, Supplier Device Package: TO-268AA, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/127ns, Switching Energy: 3.47mJ (on), 2.16mJ (off), Test Condition: 960V, 30A, 5Ohm, 15V, Gate Charge: 87 nC, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 300 W.

Інші пропозиції IXGT30N120B3D1

Назва	Виробник	Інформація	Доступність
IXGT30N120B3D1	Виробник : IXYS	Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns кількість в упаковці: 1 шт	товар відсутній
IXGT30N120B3D1	Виробник : IXYS	Description: IGBT PT 1200V TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W	товар відсутній
IXGT30N120B3D1	Виробник : IXYS	IGBT Transistors 30 Amps 1200V	товар відсутній
IXGT30N120B3D1	Виробник : IXYS	Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns	товар відсутній