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Технічний опис IXGT30N120B3D1 IXYS
Description: IGBT PT 1200V TO-268AA, Test Condition: 960V, 30A, 5Ohm, 15V, Switching Energy: 3.47mJ (on), 2.16mJ (off), Td (on/off) @ 25°C: 16ns/127ns, IGBT Type: PT, Supplier Device Package: TO-268AA, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A, Reverse Recovery Time (trr): 100 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Power - Max: 300 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Part Status: Active, Gate Charge: 87 nC, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Інші пропозиції IXGT30N120B3D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXGT30N120B3D1 | IXYS |
 Description: IGBT PT 1200V TO-268AATest Condition: 960V, 30A, 5Ohm, 15V Switching Energy: 3.47mJ (on), 2.16mJ (off) Td (on/off) @ 25°C: 16ns/127ns IGBT Type: PT Supplier Device Package: TO-268AA Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Reverse Recovery Time (trr): 100 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Power - Max: 300 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Part Status: Active Gate Charge: 87 nC Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 87nC Technology: GenX3™; PT Pulsed collector current: 150A Turn-on time: 56ns Kind of package: tube Case: TO268 Turn-off time: 471ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| IXGT30N120B3D1 |
|
Виробник: IXYS
Description: IGBT PT 1200V TO-268AA
Test Condition: 960V, 30A, 5Ohm, 15V
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C: 16ns/127ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power - Max: 300 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Part Status: Active
Gate Charge: 87 nC
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: IGBT PT 1200V TO-268AA
Test Condition: 960V, 30A, 5Ohm, 15V
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C: 16ns/127ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power - Max: 300 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Part Status: Active
Gate Charge: 87 nC
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXGT30N120B3D1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.