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IXGT30N60C2D1

IXGT30N60C2D1 IXYS


99169.pdf Виробник: IXYS
Description: IGBT 600V 70A 190W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/70ns
Switching Energy: 190µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
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Технічний опис IXGT30N60C2D1 IXYS

Description: IGBT 600V 70A 190W TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A, Supplier Device Package: TO-268AA, IGBT Type: PT, Td (on/off) @ 25°C: 13ns/70ns, Switching Energy: 190µJ (off), Test Condition: 400V, 24A, 5Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 190 W.

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IXGT30N60C2D1 Виробник : IXYS 99169-1546336.pdf IGBT Transistors 30 Amps 600V 2.7 V Rds
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