на замовлення 10 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1728.18 грн |
| 10+ | 1598.84 грн |
| 30+ | 1228.21 грн |
| 60+ | 1216.92 грн |
| 510+ | 987.75 грн |
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Технічний опис IXGT32N170 IXYS
Description: IGBT NPT 1700V 75A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 45ns/270ns, Switching Energy: 11mJ (off), Test Condition: 1020V, 32A, 2.7Ohm, 15V, Gate Charge: 155 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 350 W.
Інші пропозиції IXGT32N170
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGT32N170 | Виробник : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
товар відсутній |
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IXGT32N170 | Виробник : IXYS |
Description: IGBT NPT 1700V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 45ns/270ns Switching Energy: 11mJ (off) Test Condition: 1020V, 32A, 2.7Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
товар відсутній |
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IXGT32N170 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
товар відсутній |