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IXGT32N90B2D1

IXGT32N90B2D1 IXYS


littelfuse_discrete_igbts_pt_ixgh32n90b2d1_datasheet.pdf.pdf Виробник: IXYS
Description: IGBT 900V 64A 300W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 20ns/260ns
Switching Energy: 2.2mJ (off)
Test Condition: 720V, 32A, 5Ohm, 15V
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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Технічний опис IXGT32N90B2D1 IXYS

Description: IGBT 900V 64A 300W TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A, Supplier Device Package: TO-268AA, Td (on/off) @ 25°C: 20ns/260ns, Switching Energy: 2.2mJ (off), Test Condition: 720V, 32A, 5Ohm, 15V, Gate Charge: 89 nC, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 300 W.

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IXGT32N90B2D1 IXGT32N90B2D1 Виробник : IXYS Littelfuse_Discrete_IGBTs_PT_IXGH32N90B2D1_Datashe-1673352.pdf IGBT Transistors 32 Amps 900V 2.7 Rds
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