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IXGT64N60B3 IXYS


media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf Виробник: IXYS
Description: IGBT PT 600V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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Технічний опис IXGT64N60B3 IXYS

Description: IGBT PT 600V 64A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-268, IGBT Type: PT, Td (on/off) @ 25°C: 25ns/138ns, Switching Energy: 1.5mJ (on), 1mJ (off), Test Condition: 480V, 50A, 3Ohm, 15V, Gate Charge: 168 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 460 W.

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IXGT64N60B3 IXGT64N60B3 Виробник : IXYS media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf IGBT Transistors DISC IGBT PT-MID FREQUENCY
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