IXGX100N170 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
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Технічний опис IXGX100N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™, Type of transistor: IGBT, Technology: NPT, Collector-emitter voltage: 1.7kV, Collector current: 100A, Power dissipation: 830W, Case: PLUS247™, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mounting: THT, Gate charge: 425nC, Kind of package: tube, Turn-on time: 285ns, Turn-off time: 720ns, Features of semiconductor devices: high voltage, кількість в упаковці: 1 шт.
Інші пропозиції IXGX100N170
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGX100N170 | Виробник : IXYS |
Description: IGBT 1700V 170A 830W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: NPT Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 600 A Power - Max: 830 W |
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IXGX100N170 | Виробник : IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A |
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IXGX100N170 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 100A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 285ns Turn-off time: 720ns Features of semiconductor devices: high voltage |
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