Технічний опис IXGX50N120C3H1 Littelfuse
Description: IGBT 1200V 95A 460W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 31ns/123ns, Switching Energy: 2mJ (on), 630µJ (off), Test Condition: 600V, 40A, 2Ohm, 15V, Gate Charge: 196 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 460 W.
Інші пропозиції IXGX50N120C3H1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGX50N120C3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns кількість в упаковці: 1 шт |
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IXGX50N120C3H1 | Виробник : IXYS |
Description: IGBT 1200V 95A 460W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 31ns/123ns Switching Energy: 2mJ (on), 630µJ (off) Test Condition: 600V, 40A, 2Ohm, 15V Gate Charge: 196 nC Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 460 W |
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IXGX50N120C3H1 | Виробник : IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode |
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IXGX50N120C3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns |
товар відсутній |