
IXGX55N120A3H1 IXYS

Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Mounting: THT
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 185nC
Technology: GenX3™; PT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 400A
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
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Технічний опис IXGX55N120A3H1 IXYS
Description: IGBT 1200V 125A 460W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 23ns/365ns, Switching Energy: 5.1mJ (on), 13.3mJ (off), Test Condition: 960V, 55A, 3Ohm, 15V, Gate Charge: 185 nC, Current - Collector (Ic) (Max): 125 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 460 W.
Інші пропозиції IXGX55N120A3H1
Фото | Назва | Виробник | Інформація |
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IXGX55N120A3H1 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 23ns/365ns Switching Energy: 5.1mJ (on), 13.3mJ (off) Test Condition: 960V, 55A, 3Ohm, 15V Gate Charge: 185 nC Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 400 A Power - Max: 460 W |
товару немає в наявності |
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![]() |
IXGX55N120A3H1 | Виробник : IXYS |
![]() |
товару немає в наявності |
|
![]() |
IXGX55N120A3H1 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Mounting: THT Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 185nC Technology: GenX3™; PT Case: PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 55A Pulsed collector current: 400A Turn-on time: 70ns Turn-off time: 1253ns |
товару немає в наявності |