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IXGX82N120B3 Littelfuse

Name: IXGX82N120B3
Brand: IXYS
SKU: 453793183-1
Price: 1050.23 UAH
Availability: BackOrder

littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf

Виробник: Littelfuse
Trans IGBT Chip N-CH 1200V 230A 1250000mW 3-Pin(3+Tab) PLUS 247

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Технічний опис IXGX82N120B3 Littelfuse

Description: IGBT 1200V 230A 1250W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/210ns, Switching Energy: 5mJ (on), 3.3mJ (off), Test Condition: 600V, 80A, 2Ohm, 15V, Gate Charge: 350 nC, Part Status: Active, Current - Collector (Ic) (Max): 230 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 500 A, Power - Max: 1250 W.

Інші пропозиції IXGX82N120B3

Назва	Виробник	Інформація	Доступність
IXGX82N120B3	Виробник : IXYS	Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns кількість в упаковці: 1 шт	товар відсутній
IXGX82N120B3	Виробник : IXYS	Description: IGBT 1200V 230A 1250W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/210ns Switching Energy: 5mJ (on), 3.3mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 350 nC Part Status: Active Current - Collector (Ic) (Max): 230 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 500 A Power - Max: 1250 W	товар відсутній
IXGX82N120B3	Виробник : IXYS	IGBT Transistors GenX3 1200V IGBTs	товар відсутній
IXGX82N120B3	Виробник : IXYS	Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns	товар відсутній