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Технічний опис IXKC25N80C IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS220, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 4V @ 2mA, Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube.
Інші пропозиції IXKC25N80C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IXKC25N80C |
 TO-220 FULL PACK Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IXKC25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4V @ 2mA Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IXKC25N80C |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 800V 25A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.