IXKC40N60C
Виробник:
CoolMOS Power MOSFET ISOPLUS220 Транзистори
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Технічний опис IXKC40N60C
Description: MOSFET N-CH 600V 28A ISOPLUS220, Packaging: Tube, Package / Case: ISOPLUS220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: ISOPLUS220™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Інші пропозиції IXKC40N60C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXKC40N60C | IXYS |
 Description: MOSFET N-CH 600V 28A ISOPLUS220Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
 |
IXKC40N60C | IXYS |
MOSFET 28 Amps 600V 0.1 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXKC40N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns Type of transistor: N-MOSFET Technology: CoolMOS™ Case: ISOPLUS220™ Mounting: THT Gate charge: 230nC Kind of package: tube Gate-source voltage: ±20V On-state resistance: 95mΩ Reverse recovery time: 800ns Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXKC40N60C | |
Виробник: IXYS
Description: MOSFET N-CH 600V 28A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CH 600V 28A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXKC40N60C |
|
Виробник: IXYS
MOSFET 28 Amps 600V 0.1 Rds
MOSFET 28 Amps 600V 0.1 Rds
товару немає в наявності
В кошику
од. на суму грн.
| IXKC40N60C | |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: ISOPLUS220™
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Reverse recovery time: 800ns
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: ISOPLUS220™
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Reverse recovery time: 800ns
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.