
IXKK85N60C IXYS
Виробник: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
1+ | 3394.92 грн |
25+ | 2289.81 грн |
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Технічний опис IXKK85N60C IXYS
Description: MOSFET N-CH 600V 85A TO264A, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V, Vgs(th) (Max) @ Id: 4V @ 4mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V.
Інші пропозиції IXKK85N60C
Фото | Назва | Виробник | Інформація |
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IXKK85N60C | Виробник : Littelfuse |
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товару немає в наявності |
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IXKK85N60C | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 85A Power dissipation: 694W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
товару немає в наявності |
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![]() |
IXKK85N60C | Виробник : IXYS |
![]() |
товару немає в наявності |
|
![]() |
IXKK85N60C | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 85A Power dissipation: 694W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
товару немає в наявності |