на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2866.08 грн |
| 10+ | 2459.83 грн |
| 20+ | 1995.81 грн |
| 50+ | 1929.88 грн |
| 100+ | 1809.35 грн |
| 200+ | 1747.41 грн |
| 500+ | 1686.81 грн |
Відгуки про товар
Написати відгук
Технічний опис IXKN40N60C IXYS
Description: MOSFET N-CH 600V 40A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.5mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V.
Інші пропозиції IXKN40N60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXKN40N60C | Виробник : Littelfuse |
 Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXKN40N60C | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 290W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 70mΩ Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 650ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXKN40N60C | Виробник : IXYS |
Description: MOSFET N-CH 600V 40A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
товар відсутній |
|
|
|
IXKN40N60C | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 290W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 70mΩ Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 650ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |