IXKP24N60C5M IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
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Технічний опис IXKP24N60C5M IXYS
Description: MOSFET N-CH 600V 8.5A TO220ABFP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 790µA, Supplier Device Package: TO-220ABFP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V.
Інші пропозиції IXKP24N60C5M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXKP24N60C5M | Виробник : IXYS |
Description: MOSFET N-CH 600V 8.5A TO220ABFP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: TO-220ABFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
товару немає в наявності |
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IXKP24N60C5M | Виробник : IXYS |
MOSFETs 24 Amps 600V |
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IXKP24N60C5M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ Reverse recovery time: 390ns |
товару немає в наявності |