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Технічний опис IXRFSM18N50 IXYS
Description: MOSFET N-CH 500V 19A 16SMPD, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad, Packaging: Tube, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: 16-SMPD, Vgs(th) (Max) @ Id: 6.5V @ 250µA, Power Dissipation (Max): 835W, Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V.
Інші пропозиції IXRFSM18N50
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXRFSM18N50 | Виробник : IXYS-RF |
Description: MOSFET N-CH 500V 19A 16SMPD Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad Packaging: Tube Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Obsolete Supplier Device Package: 16-SMPD Vgs(th) (Max) @ Id: 6.5V @ 250µA Power Dissipation (Max): 835W Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
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