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IXSA110N65L2-7TR IXYS

Name: IXSA110N65L2-7TR
Brand: IXYS
SKU: 54516292-4
Price: 832.34 UAH
Availability: InStock

Littelfuse_09-11-2025_Power_Semiconductor_SiC_MOSFET_IXSA110N65L2-7TR_Datasheet.pdf

Виробник: IXYS
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L

на замовлення 900 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна
1+	832.34 грн
10+	641.75 грн
100+	464.65 грн
500+	414.13 грн
800+	352.12 грн

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Технічний опис IXSA110N65L2-7TR IXYS

Description: 650V 25M (110A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V.

Інші пропозиції IXSA110N65L2-7TR

Назва	Виробник	Інформація	Доступність	Ціна
IXSA110N65L2-7TR	Виробник : IXYS	Description: 650V 25M (110A @ 25C) SIC MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V	товару немає в наявності	В кошику од. на суму грн.
IXSA110N65L2-7TR	Виробник : IXYS	Description: 650V 25M (110A @ 25C) SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V	товару немає в наявності	В кошику од. на суму грн.
IXSA110N65L2-7TR	Виробник : IXYS	Description: 650V 25M (110A @ 25C) SIC MOSFET Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V	товару немає в наявності	В кошику од. на суму грн.