IXSA80N120L2-7TR IXYS

Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
800+ | 434.93 грн |
Відгуки про товар
Написати відгук
Технічний опис IXSA80N120L2-7TR IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V.
Інші пропозиції IXSA80N120L2-7TR за ціною від 449.29 грн до 890.51 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXSA80N120L2-7TR | Виробник : IXYS |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|