| Кількість | Ціна |
|---|---|
| 1+ | 520.16 грн |
| 10+ | 347.98 грн |
| 100+ | 228.52 грн |
| 1000+ | 216.64 грн |
| 2000+ | 193.57 грн |
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Технічний опис IXSG40N65L2K IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V, Power Dissipation (Max): 174W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V.
Інші пропозиції IXSG40N65L2K за ціною від 232.00 грн до 536.17 грн
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IXSG40N65L2K | Виробник : IXYS |
 Description: 650V 60M (40A @ 25C) SIC MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V |
на замовлення 1966 шт: термін постачання 21-31 дні (днів) |
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IXSG40N65L2K | Виробник : IXYS |
Description: 650V 60M (40A @ 25C) SIC MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V |
товару немає в наявності |