| Кількість | Ціна |
|---|---|
| 1+ | 415.98 грн |
| 10+ | 309.75 грн |
| 100+ | 218.01 грн |
| 450+ | 192.69 грн |
| 900+ | 165.27 грн |
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Технічний опис IXSH20N120L2KHV IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET, Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.5V @ 2mA, Power Dissipation (Max): 136W (Tc).
Інші пропозиції IXSH20N120L2KHV за ціною від 276.56 грн до 428.02 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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IXSH20N120L2KHV | IXYS |
 Description: 1200V 60M (20A @25C) SIC MOSFETRds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.5V @ 2mA Power Dissipation (Max): 136W (Tc) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
|
| IXSH20N120L2KHV |
|
Виробник: IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Power Dissipation (Max): 136W (Tc)
Description: 1200V 60M (20A @25C) SIC MOSFET
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Power Dissipation (Max): 136W (Tc)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 428.02 грн |
| 10+ | 276.56 грн |